源极

n.source

网络释义：Source; source electrode; Source gate

网络释义

n.1.source

1.Source source drain diode 源极 漏极二极管 source electrode 源极 source follower amplifier 源输出放大器 ...

3.Source gate总电流为 8mA为荷. R4,R5下, 衔接Q5 源极 (Drain)之处, 可以切开,用两只电流表串接, 一边的 R4若是短路时, 调整 R5, 看看流 …

5.Sourcing ... 1 D Drain 漏极 2 S Source 源极 5 SS/OLP 反馈端子 反馈、稳压控制端子 ...

8.Source terminal ... OCP/FB 输出过流检测信号和稳压控制信号 Source terminal 源极 Drain terminal 漏极 ...

1.To examine the sequence of DNA, such a nanopore is put between the source and train electrodes.为了检测DNA的排序，圆柱状管将罝放于源极与汲极之们。

2.The amplifier is provided with an input end and an output end and provides feedback path between the grid and the source.一放大器，具有一输入端以及一输出端，并且在该栅极与源极之间，提供一回授路径；

3.and forming a source region and a drain region respectively in the semiconductor substrates on two sides of the grid flank walls.在所述栅极侧墙两侧的半导体衬底内，分别形成源极区和漏极区。

4.Accordingly, threshold voltage as well as voltage of grid and source pole of the transistor also can be lowered.相应地，该晶体管的阈值电压及栅源极电压也可降低。

5.and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain.以及金属氧化物层，该金属氧化物层在该沟道层与该源极和该漏极之间形成。

6.The invention relates to a flip latch and a liquid crystal display source drive device.本发明涉及一种锁存器及液晶显示源极驱动装置。

7.In FET devices , the presence of an electrical field at the gate moderates the flow between the source and drain .在FET器件中，栅极电场的存在会调节源极和漏极之间的电流。

8.In a hard switching mode the turning on of the MOSFET is not synchronized with the drain-source voltage value.在硬开关里场效应晶体管的开启波形拐点并不和漏源极电压值同步。

9.and a source-electrode area is formed in the base and distributed on the periphery of the drain-electrode area.源极区域形成于该基底中，且分布于该栅极结构层的外围周边。

10.When the current applied by the gate is high enough, electrons flow through the channel between the source and drain electrodes.当由栅极施加的电流足够强的时候，电子会在源极和栅极之间进行流动。